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2N3055 Application Note

Part Series:

2N3055 Series

Category:

BJTs

Description:

Trans GP BJT NPN 60V 15A 3Pin(2+Tab) TO-3 Tray

Document:

2N3055 Application Note (6 Pages)

Updated Time: 2023/01/13 01:18:39 (UTC + 8)

2N3055 BJTs Application Note

#1

2N3055

Application Note (6 Pages)

4.2

ST Microelectronics

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2N3055AG

Application Note (6 Pages)

4.0

ON Semiconductor

#3

2N3055

Application Note (6 Pages)

1.3

Solid State

#4

2N3055

Application Note (6 Pages)

1.3

ON Semiconductor

2N3055 Application Note BJTs

Application Note

6 Pages

Motorola

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180W

Application Note

6 Pages

ON Semiconductor

TO-204-2 NPN 60V 15A

Application Note

6 Pages

Multicomp

The 2N3055 from Multicomp is a through hole, NPN transistors in TO-3 metal can package. The device is suitable for switching and amplification.

Application Note

6 Pages

NTE Electronics

Trans GP BJT NPN 60V 15A 3Pin(2+Tab) TO-3

Application Note

6 Pages

Semelab

Trans GP BJT NPN 60V 15A 3Pin(2+Tab) TO-3

Application Note

6 Pages

Central Semiconductor

Trans GP BJT NPN 60V 15A 3Pin (2+Tab) TO-3

Application Note

6 Pages

Taitron

Power Bipolar Transistor,

Application Note

6 Pages

Microsemi

NPN Transistor

Application Note

6 Pages

Motorola

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180W

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2N3055 - ST Microelectronics Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

1 MHz

Number of Pins

2 Pin

Voltage Rating (DC)

60.0 V

Current Rating

15.0 A

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2N3055 - ST Microelectronics Function Overview

●The 2N3055 from STMicroelectronics is a through hole complementary power transistor in TO-3 package. This device manufactured in planar technology with "base island" layout and suitable for power linear and switching applications.

● Collector to emitter voltage (Vce) is 70V at 100 ohm RBE

● Collector current (Ic) is 15A

● Power dissipation (Pd) is 115W

● Collector to emitter saturation voltage of 3V at 10A collector current

● DC current gain (hFE) of 5 at 10A collector current

● Operating junction temperature range from 200°C

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