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2N3055 Datasheet PDF

Part Series:
2N3055 Series
Category:
BJTs
Description:
Trans GP BJT NPN 60V 15A 3Pin(2+Tab) TO-3 Tray
Updated Time: 2023/01/13 01:44:53 (UTC + 8)

2N3055 BJTs Datasheet PDF

#1
2N3055

2N3055

Datasheet PDF (8 Pages)
4.2
ST Microelectronics
#2
2N3055G

2N3055G

Datasheet PDF (7 Pages)
4.9
ON Semiconductor
#3
2N3055AG

2N3055AG

Datasheet PDF (7 Pages)
4.0
ON Semiconductor

2N3055 Datasheet PDF BJTs

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TO-204-2 NPN 60V 15A
5 Pages
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TO-3 NPN 60V 15A
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Bipolar (BJT) Single Transistor, General Purpose, NPN, 60V, 800kHz, 115W, 15A, 70 hFE
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ON Semiconductor
TO-204-2 NPN 60V 15A
4 Pages
ON Semiconductor
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Motorola
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180W
4 Pages
Multicomp
The 2N3055 from Multicomp is a through hole, NPN transistors in TO-3 metal can package. The device is suitable for switching and amplification.
4 Pages
NTE Electronics
Trans GP BJT NPN 60V 15A 3Pin(2+Tab) TO-3
4 Pages
Semelab
Trans GP BJT NPN 60V 15A 3Pin(2+Tab) TO-3
4 Pages
Central Semiconductor
Trans GP BJT NPN 60V 15A 3Pin (2+Tab) TO-3
4 Pages
Taitron
Power Bipolar Transistor,
4 Pages
Microsemi
NPN Transistor

2N3055 - ST Microelectronics Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
1 MHz
Number of Pins
2 Pin
Voltage Rating (DC)
60.0 V
Current Rating
15.0 A
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2N3055 - ST Microelectronics Function Overview

The 2N3055 from STMicroelectronics is a through hole complementary power transistor in TO-3 package. This device manufactured in planar technology with "base island" layout and suitable for power linear and switching applications.
Collector to emitter voltage (Vce) is 70V at 100 ohm RBE
Collector current (Ic) is 15A
Power dissipation (Pd) is 115W
Collector to emitter saturation voltage of 3V at 10A collector current
DC current gain (hFE) of 5 at 10A collector current
Operating junction temperature range from 200°C
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