4N49 Datasheet PDF

●DESCRIPTION

●Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47, 4N48 and 4N49’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.

●Features:

●• High Reliability

●• Base lead provided for conventional transistor biasing

●• Rugged package

●• High gain, high voltage transistor

●• +1kV electrical isolation

●Applications:

●• Eliminate ground loops

●• Level shifting

●• Line receiver

●• Switching power supplies

●• Motor control