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BFP650 Datasheet PDF

Part Series:

BFP650 Series

Category:

BJTs

Description:

Digital Transistors \\- NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA

Document:

BFP650H6327XTSA1 Datasheet PDF (30 Pages)

Updated Time: 2023/01/13 01:53:47 (UTC + 8)

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BFP650 - Infineon Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

4 Pin

Case/Package

SOT-343-4

Power Rating

0.5 W

Breakdown Voltage (Collector to Emitter)

4.5 V

BFP650 - Infineon Function Overview

●Summary of Features:

● Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz

● Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system

● Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system

● Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz

● Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz

● Based on Infineon´s reliable, high volume SiGe:C wafer technology

● Easy to use Pb-free (RoHS compliant) standard package with visible leads

● Qualification report according to AEC-Q101 available

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