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Part Datasheet Search > Schottky Diodes > Vishay Semiconductor > 1N1190A Datasheet PDF
1N1190A
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1N1190A Datasheet PDF (8 Pages)
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1N1190A Specifications

TYPE
DESCRIPTION
Voltage Rating (DC)
600 V
Current Rating
40.0 A
Case/Package
DO-203AB
Output Current
≤40.0 A
Forward Voltage
1.3 V
Polarity
Standard
Thermal Resistance
1.1℃/W (RθJC)
Forward Current
40 A
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Junction Temperature (Max)
200 ℃

1N1190A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Size-Height
36.9 mm
Operating Temperature
-65℃ ~ 200℃

1N1190A Documents

Vishay Semiconductor
8 Pages / 0.15 MByte
Vishay Semiconductor
8 Pages / 0.16 MByte
Vishay Semiconductor
6 Pages / 0.26 MByte

1N1190 Documents

GeneSiC Semiconductor
Diode Switching 600V 35A 2Pin DO-5
Microsemi
1N1183 thru 1N1190, 1N3765 thru 1N3768 / 35/40/and 60A Power Silicon Rectifier Diodes
VISHAY
VS-1N1190 Series 600V 40A Power Silicon Rectifier Diode - DO-203AB (DO-5)
International Rectifier
600V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
GeneSiC Semiconductor
Diode Switching 600V 35A 2Pin DO-5
GeneSiC Semiconductor
Diode Switching 600V 40A 2Pin DO-5
GeneSiC Semiconductor
Diode Switching 600V 40A 2Pin DO-5
Solid State
Standard Diode, 40A, 600V, Do-5
VISHAY
Diode; 40A (Max.) If; 1.3V (Max.); 600V; 1.1c/w; 765A Ifms; 2.5A Ir; -65c
Microsemi
Standard Rectifier (trr more than 500ns)
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