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Part Datasheet Search > Power Diodes > Microsemi > 1N3595US Datasheet PDF
1N3595US
$ 6.85
1N3595US Datasheet PDF (2 Pages)
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1N3595US Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
2 Pin
Case/Package
B-MELF
Forward Voltage
1V @200mA
Power Dissipation
500 mW
Reverse recovery time
3000 ns
Forward Current
150 mA
Forward Current (Max)
150 mA
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
500 mW

1N3595US Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk

1N3595US Documents

Microsemi
2 Pages / 0.13 MByte
Microsemi
3 Pages / 0.21 MByte

1N3595 Documents

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1N3595 Series 0.5W(1/2W) 150V Max Reverse Voltage 200mA Small Signal Diode - DO-35
ON Semiconductor
DIODE GEN PURP 150V 200mA DO35
Microsemi
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Central Semiconductor
Leaded Silicon Diode General Purpose
Sensitron Semiconductor
Rectifier Diode, 1 Element, 0.15A, 125V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
Unitrode
Rectifier Diode, 1 Element, 0.15A, 150V V(RRM), Silicon, DO-7,
Micropac
Rectifier Diode, 1 Element, 0.15A, 125V V(RRM),
National Semiconductor
RECTIFIER DIODE,150V V(RRM),DO-35
ST Microelectronics
RECTIFIER DIODE,150V V(RRM),DO-35
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