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Part Datasheet Search > Schottky Diodes > ON Semiconductor > 1N4448TR Datasheet PDF
1N4448TR
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1N4448TR Datasheet PDF (6 Pages)
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1N4448TR Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
2 Pin
Case/Package
DO-35
Number of Positions
2 Position
Forward Voltage
1 V
Power Dissipation
500 mW
Thermal Resistance
300℃/W (RθJA)
Reverse recovery time
4 ns
Forward Current
300 mA
Max Forward Surge Current (Ifsm)
4 A
Maximum Forward Voltage (Max)
720 mV
Forward Current (Max)
200 mA
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500 mW

1N4448TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Height
4.56 mm

1N4448TR Documents

ON Semiconductor
6 Pages / 0.06 MByte
ON Semiconductor
7 Pages / 0.14 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
24 Pages / 0.56 MByte

1N4448 Documents

ON Semiconductor
Diode Small Signal Switching 100V 0.3A 2Pin DO-35 Bulk
Fairchild
1N4448 Series 100V 0.2A Axial Through Hole Small Signal Diode - DO-35
Microsemi
DIODE GEN PURP 75V 200mA DO35
Diotec Semiconductor
Rectifier Diode, 1Element, 0.15A, 75V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2
Good-Ark Electronics
DO-35 Glass 75V 150mA 0.72V
ST Microelectronics
75V,150mA,trr=4ns,VF=1V@100mA,PD=0.5W(1/2W)
NXP
NXP 1N4448 Small Signal Diode, Single, 100V, 200mA, 1V, 4ns, 4A
DC Components
Diode: switching; 100V; 100mA; 150mA; DO35; 4ns
Vishay Semiconductor
Diode, Small Signal; 300mA; 100V (Min.); 1V (Max.); 440mW; 350K/W; 100V
NTE Electronics
Diode Switching 75V 0.5A 2Pin DO-35
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