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Part Datasheet Search > TVS Diodes > VISHAY > 1N5627GP-E3/54 Datasheet PDF
1N5627GP-E3/54
$ 0.215
1N5627GP-E3/54 Datasheet PDF (4 Pages)
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1N5627GP-E3/54 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
2 Pin
Case/Package
C-16
Forward Voltage
1 V
Reverse recovery time
3000 ns
Max Repetitive Reverse Voltage (Vrrm)
800 V
Forward Current
3 A
Max Reverse Leakage Current (Ir)
5 uA
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-65 ℃

1N5627GP-E3/54 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Height
5.8 mm
Minimum Packing Quantity
1400

1N5627GP-E3/54 Documents

VISHAY
4 Pages / 0.09 MByte

1N5627 Documents

Central Semiconductor
Leaded Rectifier General Purpose
Harris
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon
NTE Electronics
R-800 PRV, 3A
Vishay Semiconductor
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, G3, 2 PIN
Vishay Intertechnology
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Fagor Electronica
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, PLASTIC PACKAGE-2
Toshiba
DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-41, GLASS PACKAGE-2, Rectifier Diode
Intersil
RECTIFIER DIODE,800V V(RRM),DO-41
EIC
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
Solid State Devices
800V, 3A standard recovery rectifier
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