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Part Datasheet Search > TVS Diodes > Vishay Semiconductor > 1N5627GPHE3/54 Datasheet PDF
1N5627GPHE3/54
$ 0.322
1N5627GPHE3/54 Datasheet PDF (4 Pages)
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1N5627GPHE3/54 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
2 Pin
Case/Package
DO-201AD
Forward Voltage
1V @3A
Reverse recovery time
3000 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-65 ℃

1N5627GPHE3/54 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
9.5 mm
Size-Width
5.3 mm
Size-Height
5.3 mm
Operating Temperature
-65℃ ~ 175℃

1N5627GPHE3/54 Documents

Vishay Semiconductor
4 Pages / 0.06 MByte
Vishay Semiconductor
5 Pages / 0.13 MByte

1N5627 Documents

Central Semiconductor
Leaded Rectifier General Purpose
Harris
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon
NTE Electronics
R-800 PRV, 3A
Vishay Semiconductor
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, G3, 2 PIN
Vishay Intertechnology
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Fagor Electronica
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, PLASTIC PACKAGE-2
Toshiba
DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-41, GLASS PACKAGE-2, Rectifier Diode
Intersil
RECTIFIER DIODE,800V V(RRM),DO-41
EIC
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
Solid State Devices
800V, 3A standard recovery rectifier
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