1N5817G Datasheet PDF - ON Semiconductor

●The 1N5817G is an axial-lead Schottky Rectifier with epoxy moulded case. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.

● Cathode indicated by polarity band

● Extremely low VF

● Low stored charge, majority carrier conduction

● Low-power loss/high-efficiency

● All external surfaces corrosion-resistant