1N5820G Datasheet PDF - ON Semiconductor

●The 1N5820G is an axial-leaded Schottky Barrier Rectifier with moulded epoxy case, all external surfaces corrosion-resistant and terminal leads are readily solderable finish. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.

● Extremely low forward voltage

● Low power loss/high efficiency

● Low stored charge and majority carrier conduction

● 24V Non-repetitive peak reverse voltage

● 14V RMS reverse voltage

● 28°C/W Junction-to-ambient thermal resistance