1N5821 Datasheet PDF - ON Semiconductor

●The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.

●Features

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● Extremely Low vF

● Low Power Loss/High Efficiency

● Low Stored Charge, Majority Carrier Conduction

●Mechanical Characteristics:

● Case: Epoxy, Molded

● Weight: 1.1 gram (approximately)

● Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

● Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds

● Shipped in plastic bags, 5,000 per bag

● Available Tape and Reeled, 1500 per reel, by adding a "RL"" suffix to the part number

● Polarity: Cathode indicated by Polarity Band

● Marking: 1N5820, 1N5821, 1N5822

● Pb-Free Packages are Available