1N6511 Datasheet PDF - Microsemi

●DESCRIPTION

●These lowcapacitance diode arrays are multiple, discrete, isolatedjunctions fabricated by a planar process and mounted in a 14-PINceramic DIP packagefor useas steering diodes protecting up to seven I/O ports from ESD, EFT,or surge by directing them either to the positive sideof the power supply line or to ground (seeFigure 1).

●FEATURES

●•  Hermetic Ceramic Package

●•  Isolated Diodesto Eliminate Cross-Talk Voltages

●•  High BreakdownVoltage VBR >75 V at 5 µA

●•  LowLeakage IR<100nA at 40V

●•  LowCapacitance C <4.0 pF

●•  Switching Speeds less than10ns

●•  Options for screening inaccordance with MIL-PRF-19500/474 for JAN, JANTX, JANTXV, and JANS are available byadding MQ, MX, MV, or MSP prefixes respectivelyto part numbers. For example, designate MX1N6511 for a JANTX screen.

●APPLICATIONS/ BENEFITS

●•  High Frequency DataLines

●•  RS-232& RS-422 Interface Networks

●•  Ethernet: 10 Base T

●•  Computer I/O Ports

●•  LAN

●•  Switching CoreDrivers

●•  IEC 61000-4 Compatible (seecircuit in figure1)

●    61000-4-2 ESD: Air 15 kV, contact 8 kW

●    61000-4-4 (EFT): 40 A – 5/50 ns

●    61000-4-5 (surge): 12 A 8/20 µs