2ED020I12-FI Datasheet PDF - Infineon

●The 2ED020I12-FI is a 2-channel high voltage high speed power MOSPET and IGBT Driver with CT technology and interlocking high and low-side referenced outputs. The floating high-side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver is equipped with a dedicated shutdown input. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. This driver is designed to drive an N-channel power IGBT which operate up to 1.2kV.

● Matched propagation delay

● High DV/DT immunity

● Low power consumption

● Floating high side driver

● Under-voltage lockout

● 3.3 and 5V TTL compatible inputs

● CMOS Schmitt-triggered inputs with pull-down

● Non-inverting inputs

● Interlocking inputs

● Dedicated shutdown input with pull-up