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2N2102 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

BJTs

Case Package:

TO-5-3

Description:

Trans GP BJT NPN 65V 1A 3Pin TO-39 Bag

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

2N2102 Datasheet (4 Pages)

2N2102 Datasheet PDF (4 Pages)

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2N2102 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

120 V

Current Rating

1.00 A

Case/Package

TO-5-3

Polarity

NPN

Power Dissipation

1000 mW

Breakdown Voltage (Collector to Base)

120 V (min)

Breakdown Voltage (Collector to Emitter)

65 V

hFE Min

40 @150mA, 10V

Input Power (Max)

1 W

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

1000 mW

View Datasheet >

2N2102 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tube

Material

Silicon

Size-Length

9.4 mm

Size-Width

9.4 mm

Size-Height

6.6 mm

Operating Temperature

175℃ (TJ)

View Datasheet >

2N2102 Environmental

2N2102 Function Overview

2N2102 Documents

2N2102 Datasheet

ST Microelectronics

4 Pages / 0.04 MByte

2N2102 Drawing Diagrams

ST Microelectronics

2 Pages / 0.54 MByte

2N2102 Other References

ST Microelectronics

1 Pages / 0.16 MByte

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