2N2219A Datasheet PDF - ST Microelectronics

●The 2N2219A from STMicroelectronics is a through hole NPN silicon planar epitaxial transistor in TO-39 package. This transistor designed as high speed switch which features low leakage currents, low saturation voltage and useful current gain over a wide range of collector current. Typically suitable for high speed switching application.

● Collector to emitter voltage (Vce) is 40V

● Collector current (Ic) is 0.6A

● Power dissipation (Pd) is 3W

● Collector to emitter saturation voltage of 1V at 500mA collector current

● DC current gain (hFE) of 35 at 0.1mA collector current

● Operating junction temperature range from 175°C