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Part Datasheet Search > BJTs > Central Semiconductor > 2N2222A Datasheet PDF
2N2222A
$ 1.553
2N2222A Datasheet PDF (5 Pages)
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2N2222A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
300 MHz
Number of Pins
3 Pin
Case/Package
TO-18-3
Power Dissipation
400 mW
Gain Bandwidth Product
300 MHz
Breakdown Voltage (Collector to Emitter)
40 V
hFE Min
100 @150mA, 10V
Input Power (Max)
500 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
65 ℃
Power Dissipation (Max)
500 mW

2N2222A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Size-Length
5.84 mm
Size-Width
5.84 mm
Size-Height
5.33 mm
Operating Temperature
-65℃ ~ 200℃ (TJ)

2N2222A Documents

Central Semiconductor
5 Pages / 0.37 MByte
Central Semiconductor
10 Pages / 0.36 MByte

2N2222 Documents

Multicomp
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
Central Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18 Box
ST Microelectronics
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
ON Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18
National Semiconductor
General Purpose Applications, 60V, 600mA, 330mW, B= 100~300, > 250MHz
Micro Commercial Components
TO-18 Metal Can TransistorsP
Fairchild
Transistor NPN 2N2222 TUNGSRAM miliampere=800V=30 TO18
Philips
NPN switching transistors
Continental Device
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
Semicoa Semiconductor
Chip: geometry 0400; polarity NPN
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