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Part Datasheet Search > BJTs > Central Semiconductor > 2N2904A Datasheet PDF
2N2904A
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2N2904A Datasheet PDF (1 Pages)
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2N2904A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-39-3
Power Dissipation
600 mW
Gain Bandwidth Product
200 MHz
Breakdown Voltage (Collector to Emitter)
60 V
hFE Min
40 @10mA, 10V
Input Power (Max)
600 mW
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
65 ℃
Power Dissipation (Max)
600 mW

2N2904A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Size-Length
9.4 mm
Size-Width
9.4 mm
Size-Height
6.6 mm
Operating Temperature
-65℃ ~ 200℃ (TJ)

2N2904A Documents

Central Semiconductor
1 Pages / 0.06 MByte
Central Semiconductor
3 Pages / 0.32 MByte

2N2904 Documents

Central Semiconductor
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600mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
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Chip Ty pe 2C2904A Geometry 0600 Polarity PNP
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TI
Trans GP BJT PNP 40V 0.6A 3Pin TO-39
Solid State Devices
RF Small Signal Bipolar Transistor, 0.6A I(C), 1Element, Silicon, PNP, TO-39, TO-39, 3Pin
NXP
TRANSISTOR 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39, TO-39, 3 PIN, BIP General Purpose Small Signal
Raytheon
GB PNP Medium Current General Purpose Amplifier and Switches
Fairchild
PNP small signal general purpose amplifier & switch .
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