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Part Datasheet Search > BJTs > ST Microelectronics > 2N3055 Datasheet PDF
2N3055
$ 0.181
2N3055 Datasheet PDF (7 Pages)
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2N3055 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
1 MHz
Number of Pins
2 Pin
Voltage Rating (DC)
60.0 V
Current Rating
15.0 A
Case/Package
TO-3
Power Rating
115 W
Number of Positions
2 Position
Polarity
NPN
Power Dissipation
115 W
Breakdown Voltage (Collector to Base)
100 V
Breakdown Voltage (Collector to Emitter)
60 V
hFE Min
20 @4A, 4V
hFE Max
70
Input Power (Max)
115 W
DC Current Gain (hFE)
70
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
115000 mW

2N3055 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tray
Material
Silicon
Size-Length
39.5 mm
Size-Width
26.2 mm
Size-Height
8.7 mm
Operating Temperature
-65℃ ~ 200℃

2N3055 Documents

ST Microelectronics
7 Pages / 0.2 MByte
ST Microelectronics
5 Pages / 0.05 MByte
ST Microelectronics
6 Pages / 0.13 MByte
ST Microelectronics
5 Pages / 0.03 MByte
ST Microelectronics
4 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.16 MByte
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