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Part Datasheet Search > BJTs > Microsemi > 2N3251A Datasheet PDF
2N3251A
$ 172.362
2N3251A Datasheet PDF (4 Pages)
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2N3251A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-39-3
Power Dissipation
360 mW
Breakdown Voltage (Collector to Emitter)
60 V
hFE Min
100 @10mA, 1V
Input Power (Max)
360 mW
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
360 mW

2N3251A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-65℃ ~ 200℃ (TJ)

2N3251A Documents

Microsemi
4 Pages / 0.12 MByte

2N3251 Documents

Central Semiconductor
2N3251 Series 40V 0.2A Through Hole PNP Silicon Transistor - TO-18
Microsemi
Trans GP BJT PNP 60V 0.2A 3Pin TO-39
Multicomp
MULTICOMP 2N3251A Bipolar (BJT) Single Transistor, PNP, -60V, 360mW, 200mA, 50 hFE
Microsemi
PNP 60V 0.2A
National Semiconductor
TRANS PNP 60V 0.2A TO-39
Central Semiconductor
Small Signal Transistors TO-18 Case
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