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2N3716 Datasheet PDF - Central Semiconductor

Manufacturer:

Central Semiconductor

Category:

BJTs

Case Package:

TO-3

Description:

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1Element, NPN, Silicon, TO-3, Metal, 2Pin, TO-3, 2Pin

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Documentation:

2N3716 Datasheet (2 Pages)

2N3716 Datasheet PDF (2 Pages)

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2N3716 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

4 MHz

Number of Pins

3 Pin

Case/Package

TO-3

Power Dissipation

150 W

Breakdown Voltage (Collector to Emitter)

80 V

hFE Min

50 @1A, 2V

Input Power (Max)

150 W

Operating Temperature (Max)

200 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

150000 mW

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2N3716 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Material

Silicon

Operating Temperature

-65℃ ~ 200℃ (TJ)

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2N3716 Environmental

2N3716 Function Overview

2N3716 Documents

2N3716 Datasheet

Central Semiconductor

2 Pages / 0.08 MByte

2N3716 Other Datasheet PDF

Central Semiconductor

3 Pages / 0.56 MByte

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