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Part Datasheet Search > BJTs > Microsemi > 2N3810U Datasheet PDF
2N3810U
$ 30.408
2N3810U Datasheet PDF (3 Pages)
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2N3810U Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
6 Pin
Case/Package
TO-78-6
Polarity
PNP
Power Dissipation
0.35 W
Breakdown Voltage (Collector to Emitter)
60 V
Continuous Collector Current
0.05A
hFE Min
150 @1mA, 5V
Input Power (Max)
350 mW
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
350 mW

2N3810U Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Operating Temperature
-65℃ ~ 200℃ (TJ)

2N3810U Documents

Microsemi
3 Pages / 0.11 MByte
Microsemi
17 Pages / 0.13 MByte

2N3810 Documents

Microsemi
Trans GP BJT PNP 60V 0.05A 6Pin TO-78
Central Semiconductor
Trans GP BJT PNP 60V 0.05A 6Pin TO-78 Box
Solid State
SOLID STATE 2N3810 Bipolar Transistor Array, PNP, -60V, 0.5W(1/2W), 50mA, 450 hFE, TO-78
Microchip
TRANS 2PNP 60V 0.05A TO-78
Intersil
N-CHANNEL JFET
Semicoa Semiconductor
Chip Type 2C2605 Geometry 0220 Polarity NPN
Crystalonics
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, CASE 654-07, 6 PIN
TI
50mA, 60V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78
Advanced Semiconductor
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, PNP, Silicon, TO-77, TO-77, 8 PIN
Raytheon
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, TO-78, 8 PIN
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