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Part Datasheet Search > BJTs > Microsemi > 2N3811L Datasheet PDF
2N3811L
$ 50.857
2N3811L Datasheet PDF (3 Pages)
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2N3811L Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
6 Pin
Case/Package
TO-78-6
Power Dissipation
0.35 W
Breakdown Voltage (Collector to Emitter)
60 V
hFE Min
300 @1mA, 5V
Input Power (Max)
350 mW
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
350 mW

2N3811L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Material
Silicon
Operating Temperature
-65℃ ~ 200℃ (TJ)

2N3811L Documents

Microsemi
3 Pages / 0.11 MByte
Microsemi
2 Pages / 0.3 MByte

2N3811 Documents

Microsemi
TRANS 2PNP 60V 0.05A TO-78
Solid State
SOLID STATE 2N3811 Bipolar Transistor Array, PNP, -60V, 0.5W(1/2W), 50mA, 900 hFE, TO-78
Central Semiconductor
Trans 2pnp 50mA 60V To78-6
Intersil
N-CHANNEL JFET
Semicoa Semiconductor
Chip Type 2C2605 Geometry 0220 Polarity NPN
New Jersey Semiconductor
Trans GP BJT PNP 60V 0.05A 6Pin TO-78
InterFET
N-Channel Silicon Junction Field-Effect Transistor
Microsemi
Trans GP BJT PNP 60V 0.05A 6Pin TO-78
Microsemi
PNP 60V 0.05A
Central Semiconductor
TO-78 PNP 60V 0.05A
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