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Part Datasheet Search > BJTs > ON Semiconductor > 2N3906TA Datasheet PDF
2N3906TA
$ 0.031
2N3906TA Datasheet PDF (7 Pages)
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2N3906TA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
250 MHz
Number of Pins
3 Pin
Case/Package
TO-92-3
Number of Positions
3 Position
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
40 V
hFE Min
100 @10mA, 1V
Input Power (Max)
625 mW
DC Current Gain (hFE)
30
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-50 ℃
Power Dissipation (Max)
625 mW

2N3906TA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃

2N3906TA Documents

ON Semiconductor
7 Pages / 0.16 MByte
ON Semiconductor
10 Pages / 0.23 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
27 Pages / 1 MByte

2N3906 Documents

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Trans GP BJT PNP 40V 0.2A 3Pin TO-92 Bulk
Multicomp
MULTICOMP 2N3906 Bipolar (BJT) Single Transistor, High Speed Switching, PNP, 40V, 250MHz, 625mW, 200mA, 100 hFE
Diotec Semiconductor
Trans GP BJT PNP 40V 0.2A 625mW Automotive 3Pin TO-92 Ammo
Fairchild
Trans GP BJT PNP 40V 0.2A 3Pin TO-92
NTE Electronics
Trans GP BJT PNP 40V 0.2A 3Pin TO-92
先科ST
PNP Silicon Epitaxial Planar Transistor
Central Semiconductor
Trans GP BJT PNP 40V 0.2A 3Pin TO-92 Box
Motorola
200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
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