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Part Datasheet Search > BJTs > ON Semiconductor > 2N4123RLRM Datasheet PDF
2N4123RLRM
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2N4123RLRM Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-226-3
Description:
Trans GP BJT NPN 30V 0.2A 3Pin TO-92 Ammo
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
2N4123RLRM Datasheet (7 Pages)
Package Outline Dimension on6 Page
Part Numbering System on1 Page6 Page
2N4123RLRM Datasheet PDF (7 Pages)
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2N4123RLRM Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
30.0 V
Current Rating
200 mA
Case/Package
TO-226-3
Power Dissipation
625 mW
Gain Bandwidth Product
250 MHz
Breakdown Voltage (Collector to Emitter)
30 V
hFE Min
50 @2mA, 1V
Input Power (Max)
625 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
View Datasheet >

2N4123RLRM Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Box
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

2N4123RLRM Documents

2N4123RLRM Datasheet
ON Semiconductor
7 Pages / 0.11 MByte
2N4123RLRM Other Datasheet PDF
ON Semiconductor
9 Pages / 0.05 MByte

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