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2N4124BU
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2N4124BU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-226-3
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
25 V
hFE Min
120 @2mA, 1V
Input Power (Max)
625 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

2N4124BU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N4124BU Documents

ON Semiconductor
10 Pages / 0.22 MByte
ON Semiconductor
9 Pages / 0.18 MByte

2N4124 Documents

Central Semiconductor
Trans GP BJT NPN 25V 0.2A 3Pin TO-92 Box
ON Semiconductor
Trans GP BJT NPN 25V 0.2A 3Pin TO-92
Fairchild
Trans GP BJT NPN 25V 0.2A 3Pin TO-92
CJ
TO-92 NPN 25V 200mA
NTE Electronics
t-Npn Si- Gen Pur Amp
Vishay Semiconductor
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN
NXP
TRANSISTOR 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43, 3 PIN, BIP General Purpose Small Signal
Motorola
200mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
ST Microelectronics
TRANSISTOR,BJT,NPN,25V V(BR)CEO,200MA I(C),TO-92
Samsung
NPN EPITAXIAL SILICON TRANSISTOR
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