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Part Datasheet Search > BJTs > ON Semiconductor > 2N4401TA Datasheet PDF
2N4401TA
$ 0.214
2N4401TA Datasheet PDF (7 Pages)
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2N4401TA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
250 MHz
Number of Pins
3 Pin
Case/Package
TO-92-3
Number of Positions
3 Position
Power Dissipation
0.625 W
Breakdown Voltage (Collector to Emitter)
40 V
hFE Min
100 @150mA, 1V
Input Power (Max)
625 mW
DC Current Gain (hFE)
20
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

2N4401TA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Box
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N4401TA Documents

ON Semiconductor
7 Pages / 0.19 MByte
ON Semiconductor
2 Pages / 0.13 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
13 Pages / 0.34 MByte

2N4401 Documents

CJ
TO-92 NPN 40V 600mA
Diotec Semiconductor
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
Central Semiconductor
Trans GP BJT NPN 40V 0.6A 3Pin TO-92 Tape and Box
ON Semiconductor
Trans GP BJT NPN 40V 0.6A 3Pin TO-92 Bulk
Fairchild
Trans GP BJT NPN 40V 0.6A 3Pin TO-92
ST Microelectronics
NPN,Vceo=40V,Ic=600mA,hfe=40~300
Multicomp
MULTICOMP 2N4401 Bipolar (BJT) Single Transistor, NPN, 40V, 250MHz, 625mW, 600mA, 100 hFE
先科ST
2N4401
Taitron
40V NPN General Purpose Transistor, Ic=600mA in TO-92, RoHS
UTC
TO-92 NPN 40V 0.6A
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