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2N4416A Datasheet PDF - Central Semiconductor

Manufacturer:

Central Semiconductor

Category:

JFETs

Case Package:

TO-72

Description:

RF Small Signal Field-Effect Transistor, 1Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-72, TO-72, 3Pin

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Documentation:

2N4416A Datasheet (5 Pages)

Package Outline Dimension on2 Page 5 Page

2N4416A Datasheet PDF (5 Pages)

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2N4416A Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-72

Polarity

N-Channel

Power Dissipation

300 mW

Drain to Source Voltage (Vds)

35 V

Breakdown Voltage (Drain to Source)

35 V

Breakdown Voltage (Gate to Source)

35 V

Continuous Drain Current (Ids)

15.0 mA

Reverse Breakdown Voltage

35 V

Input Capacitance (Ciss)

4pF @15V(Vds)

Input Power (Max)

300 mW

Power Dissipation (Max)

300 mW

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2N4416A Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Operating Temperature

-65℃ ~ 200℃ (TJ)

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2N4416A Environmental

2N4416A Function Overview

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2N4416A Datasheet

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5 Pages / 1.09 MByte

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