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2N4858A
$ 2.617
2N4858A Datasheet PDF (3 Pages)
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2N4858A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-206
Drain to Source Resistance (on) (Rds)
60 Ω
Power Dissipation
360 mW
Breakdown Voltage (Drain to Source)
40 V
Breakdown Voltage (Gate to Source)
20 V
Reverse Breakdown Voltage
40 V
Input Capacitance (Ciss)
10pF @10V(Vgs)
Input Power (Max)
360 mW
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
65 ℃
Power Dissipation (Max)
360 mW

2N4858A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Operating Temperature
-65℃ ~ 200℃ (TJ)

2N4858A Documents

Central Semiconductor
3 Pages / 0.57 MByte
Central Semiconductor
3 Pages / 0.59 MByte

2N4858 Documents

Motorola
JFET JFET N-Channel
Microsemi
2N4858 Series 40V 80mA Through Hole N-Channel J-FET - TO-18
Microchip
JFET JFETs
Solid State
JFET Transistor, JFET, JFET, -40V, 80mA, 4V, TO-18
NXP
RF Manual 16th edition
InterFET
N-Channel Silicon Junction Field-Effect Transistor
ETC1
N-Channel JFETs(Switches, RF Amplifiers)
New Jersey Semiconductor
Trans JFET N-CH 40V 3Pin TO-18o
Central Semiconductor
JFET N-CH 40V 0.36W TO-18
Solid State
SOLID STATE 2N4858A JFET Transistor, JFET, -40V, 8mA, 80mA, -4V, TO-18, JFET
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