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Part Datasheet Search > BJTs > ON Semiconductor > 2N5088G Datasheet PDF
2N5088G
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2N5088G Datasheet PDF (5 Pages)
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2N5088G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
50 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
30.0 V
Current Rating
50.0 mA
Case/Package
TO-226-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
625 mW
Gain Bandwidth Product
50 MHz
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
0.05A
hFE Min
300 @100µA, 5V
hFE Max
900
Input Power (Max)
625 mW
DC Current Gain (hFE)
50
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

2N5088G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N5088G Documents

ON Semiconductor
5 Pages / 0.08 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
13 Pages / 0.34 MByte
ON Semiconductor
1 Pages / 0.16 MByte

2N5088 Documents

ON Semiconductor
Trans GP BJT NPN 30V 0.05A 3Pin TO-92 Bulk
UTC
TO-92 NPN 30V 0.1A
Fairchild
Trans GP BJT NPN 30V 0.1A 3Pin TO-92
Central Semiconductor
Trans GP BJT NPN 30V 0.05A 3Pin TO-92 Box
Motorola
Amplifier Transistor(NPN Silicon)
Samsung
Trans GP BJT NPN 30V 0.05A 3Pin TO-92 Bulk
Micro Electronics
PNP/NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
Continental Device
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.05A Ic, 300 - 900 hFE
Allegro MicroSystems
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
LiteOn
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN
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