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2N5195 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

BJTs

Case Package:

TO-126-3

Description:

Trans GP BJT PNP 80V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

2N5195 Datasheet (9 Pages)

Package Outline Dimension on6 Page 7 Page

2N5195 Datasheet PDF (9 Pages)

View Datasheet

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2N5195 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

2 MHz

Number of Pins

3 Pin

Voltage Rating (DC)

-80.0 V

Current Rating

-4.00 A

Case/Package

TO-126-3

Number of Positions

3 Position

Polarity

PNP, P-Channel

Power Dissipation

40 W

Breakdown Voltage (Collector to Emitter)

80 V

hFE Min

20 @1.5A, 2V

hFE Max

Input Power (Max)

40 W

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

40000 mW

View Datasheet >

2N5195 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Tube

Operating Temperature

150℃ (TJ)

View Datasheet >

2N5195 Environmental

2N5195 Export Classifications

2N5195 Function Overview

2N5195 Documents

2N5195 Datasheet

ST Microelectronics

9 Pages / 0.2 MByte

2N5195 Other Datasheet PDF

ST Microelectronics

5 Pages / 0.11 MByte

2N5195 Other References

ST Microelectronics

1 Pages / 0.13 MByte

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