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2N5210TFR
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2N5210TFR Datasheet PDF (7 Pages)
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2N5210TFR Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
30 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
50.0 V
Current Rating
100 mA
Case/Package
TO-226-3
Polarity
NPN
Power Dissipation
0.625 W
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
0.1A
hFE Min
200 @100µA, 5V
hFE Max
600
Input Power (Max)
625 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-50 ℃
Power Dissipation (Max)
625 mW

2N5210TFR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N5210TFR Documents

Fairchild
7 Pages / 0.08 MByte
Fairchild
9 Pages / 0.2 MByte

2N5210 Documents

ON Semiconductor
Trans GP BJT NPN 50V 0.05A 3Pin TO-92
Central Semiconductor
Trans Npn 50V 0.05A To-92
Fairchild
Trans GP BJT NPN 50V 0.1A 3Pin TO-92
Motorola
MOT# 2N5210 Bipolar Small Signal NPN Gen Pur SS
NTE Electronics
NTE ELECTRONICS 2N5210 Bipolar (BJT) Single Transistor, NPN, 50V, 30MHz, 625mW, 100mA, 250 hFE
Samsung
NPN EPITAXIAL SILICON TRANSISTOR
HGF
TRANS NPN 50V 0.05A TO-92
Micro Electronics
NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
Plessey
Small Signal Bipolar Transistor,
TI
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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