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2N5400G
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2N5400G Datasheet PDF (10 Pages)
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2N5400G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-120 V
Current Rating
500 mA
Case/Package
TO-226-3
Polarity
PNP
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
120 V
Continuous Collector Current
0.6A
hFE Min
40 @10mA, 5V
Input Power (Max)
625 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

2N5400G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Material
Silicon
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N5400G Documents

ON Semiconductor
10 Pages / 0.14 MByte
ON Semiconductor
10 Pages / 0.21 MByte

2N5400 Documents

ON Semiconductor
TRANS PNP 120V 0.6A TO-92
Fairchild
Trans GP BJT PNP 120V 0.6A 3Pin TO-92 Bulk
NTE Electronics
Trans GP BJT PNP 120V 0.6A 3Pin TO-92 Bulk
Central Semiconductor
Small Signal Transistors
CJ
TO-92 PNP 120V 600mA
Motorola
Trans GP BJT PNP 120V 0.6A 3Pin TO-92 Trans GP BJT PNP 120V 0.6A 3Pin TO-92 Trans GP BJT PNP 120V 0.6A 3Pin TO-92
KEC(Korea Electronics)
High Voltage Transistor
Micro Electronics
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS
TI
600mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Continental Device
0.5W(1/2W) General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.6A Ic, 40 - hFEm
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