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2N5400RLRPG
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2N5400RLRPG Datasheet PDF (10 Pages)
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2N5400RLRPG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
-120 V
Current Rating
-600 mA
Case/Package
TO-92-3
Polarity
PNP
Power Dissipation
225 mW
Gain Bandwidth Product
400 MHz
Breakdown Voltage (Collector to Emitter)
120 V
Continuous Collector Current
0.6A
hFE Min
40 @10mA, 5V
Input Power (Max)
625 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃

2N5400RLRPG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N5400RLRPG Documents

ON Semiconductor
10 Pages / 0.14 MByte
ON Semiconductor
10 Pages / 0.21 MByte

2N5400 Documents

ON Semiconductor
TRANS PNP 120V 0.6A TO-92
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Trans GP BJT PNP 120V 0.6A 3Pin TO-92 Bulk
NTE Electronics
Trans GP BJT PNP 120V 0.6A 3Pin TO-92 Bulk
Central Semiconductor
Small Signal Transistors
CJ
TO-92 PNP 120V 600mA
Motorola
Trans GP BJT PNP 120V 0.6A 3Pin TO-92 Trans GP BJT PNP 120V 0.6A 3Pin TO-92 Trans GP BJT PNP 120V 0.6A 3Pin TO-92
KEC(Korea Electronics)
High Voltage Transistor
Micro Electronics
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS
TI
600mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Continental Device
0.5W(1/2W) General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.6A Ic, 40 - hFEm
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