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Part Datasheet Search > BJTs > ON Semiconductor > 2N5401RL1 Datasheet PDF
2N5401RL1
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2N5401RL1 Datasheet PDF (6 Pages)
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2N5401RL1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
-150 V
Current Rating
-600 mA
Case/Package
TO-226-3
Polarity
PNP
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
150 V
Continuous Collector Current
0.6A
hFE Min
60 @10mA, 5V
Input Power (Max)
625 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

2N5401RL1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N5401RL1 Documents

ON Semiconductor
6 Pages / 0.18 MByte
ON Semiconductor
31 Pages / 0.08 MByte

2N5401 Documents

ON Semiconductor
Trans GP BJT PNP 150V 0.6A 3Pin TO-92
Diotec Semiconductor
Transistor: PNP; bipolar; 150V; 600mA; 625mW; TO92
CJ
TO-92 PNP 150V 600mA
Central Semiconductor
Trans Pnp 150V 0.6A To-92
先科ST
TRANS PNP 150V 0.6A TO-92
ST Microelectronics
PNP,Vceo=-150V,Ic=-600mA,hfe=50~240
Multicomp
Ic, Linear Voltage Regulator, 24V, To-92
NXP
Trans GP BJT PNP 150V 0.3A 3Pin SPT Bulk
Fairchild
Trans GP BJT PNP 150V 0.6A 3Pin TO-92
UTC
HIGH VOLTAGE SWITCHING TRANSISTOR
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