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2N5415 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

BJTs

Case Package:

TO-39-3

Description:

Trans GP BJT PNP 200V 1A 3Pin TO-39 Bag

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

2N5415 Datasheet (4 Pages)

2N5415 Datasheet PDF (4 Pages)

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2N5415 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

15 MHz

Number of Pins

3 Pin

Voltage Rating (DC)

-200 V

Current Rating

-1.00 A

Case/Package

TO-39-3

Number of Positions

3 Position

Polarity

PNP, P-Channel

Power Dissipation

1 W

Gain Bandwidth Product

15 MHz

Breakdown Voltage (Collector to Emitter)

200 V

hFE Min

30 @50mA, 10V

hFE Max

150

Input Power (Max)

1 W

DC Current Gain (hFE)

Operating Temperature (Max)

200 ℃

Operating Temperature (Min)

65 ℃

Power Dissipation (Max)

1000 mW

View Datasheet >

2N5415 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Material

Silicon

Size-Length

9.4 mm

Size-Width

9.4 mm

Size-Height

1.5 mm

Operating Temperature

-65℃ ~ 200℃

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2N5415 Environmental

2N5415 Function Overview

2N5415 Documents

2N5415 Datasheet

ST Microelectronics

4 Pages / 0.04 MByte

2N5415 Other Datasheet PDF

ST Microelectronics

4 Pages / 0.04 MByte

2N5415 Other References

ST Microelectronics

1 Pages / 0.13 MByte

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