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Part Datasheet Search > BJTs > ST Microelectronics > 2N5416 Datasheet PDF
2N5416
$ 3.324
2N5416 Datasheet PDF (4 Pages)
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2N5416 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
50 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-350 V
Current Rating
-1.00 A
Case/Package
TO-39
Power Rating
10 W
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
10 W
Breakdown Voltage (Collector to Emitter)
300 V
hFE Min
30 @50mA, 10V
Input Power (Max)
1 W
DC Current Gain (hFE)
30
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1000 mW

2N5416 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Bag
Material
Silicon
Size-Width
9.4 mm
Operating Temperature
-65℃ ~ 200℃

2N5416 Documents

ST Microelectronics
4 Pages / 0.04 MByte
ST Microelectronics
4 Pages / 0.04 MByte
ST Microelectronics
5 Pages / 0.03 MByte
ST Microelectronics
4 Pages / 0.06 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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