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Part Datasheet Search > JFETs > Central Semiconductor > 2N5460 Datasheet PDF
2N5460
$ 0.441
2N5460 Datasheet PDF (1 Pages)
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2N5460 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-226-3
Polarity
P-Channel
Power Dissipation
310 mW
Breakdown Voltage (Gate to Source)
40.0 V
Continuous Drain Current (Ids)
5.00 mA
Reverse Breakdown Voltage
40 V
Input Capacitance (Ciss)
7pF @15V(Vds)
Input Power (Max)
310 mW
Power Dissipation (Max)
310 mW

2N5460 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Operating Temperature
-65℃ ~ 150℃ (TJ)

2N5460 Documents

Central Semiconductor
1 Pages / 0.05 MByte
Central Semiconductor
5 Pages / 0.09 MByte
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