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Part Datasheet Search > JFETs > ON Semiconductor > 2N5461G Datasheet PDF
2N5461G
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2N5461G Datasheet PDF (5 Pages)
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2N5461G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-40.0 V
Current Rating
10.0 mA
Case/Package
TO-226-3
Polarity
P-Channel
Power Dissipation
350 mW
Breakdown Voltage (Gate to Source)
40.0 V
Reverse Breakdown Voltage
40 V
Input Capacitance (Ciss)
7pF @15V(Vds)
Input Power (Max)
350 mW
Operating Temperature (Max)
135 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
350 mW

2N5461G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Size-Height
5.33 mm
Operating Temperature
-65℃ ~ 135℃ (TJ)

2N5461G Documents

ON Semiconductor
5 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.12 MByte

2N5461 Documents

ON Semiconductor
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Central Semiconductor
Trans JFET P-CH Si 3Pin TO-92
TI
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InterFET
P-Channel silicon junction field-effect transistor
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