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2N5550G
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2N5550G Datasheet PDF (6 Pages)
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2N5550G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
300 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
140 V
Current Rating
600 mA
Case/Package
TO-226-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
140 V
Thermal Resistance
83.3℃/W (RθJC)
Continuous Collector Current
0.6A
hFE Min
60 @10mA, 5V
Input Power (Max)
625 mW
DC Current Gain (hFE)
60
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

2N5550G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃

2N5550G Documents

ON Semiconductor
6 Pages / 0.08 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
13 Pages / 0.34 MByte

2N5550 Documents

ON Semiconductor
Trans GP BJT NPN 140V 0.6A 3Pin TO-92 Box
Fairchild
Trans GP BJT NPN 140V 0.6A 3Pin TO-92
KEC(Korea Electronics)
EPITAXIAL PLANAR NPN TRANSISTOR
CJ
TO-92 NPN 140V 600mA
Central Semiconductor
Trans GP BJT NPN 140V 0.6A 3Pin TO-92 Box
Philips
NPN high-voltage transistors
NXP
Trans Npn 140V 0.6A To92 Trans Npn 140V 0.6A To92
Motorola
Amplifier Transistors
Diotec Semiconductor
General Purpose Si-Epitaxial Planar Transistors
Samsung
NPN EPITAXIAL SILICON TRANSISTOR
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