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Part Datasheet Search > BJTs > ON Semiconductor > 2N5550TAR Datasheet PDF
2N5550TAR
$ 0.053
2N5550TAR Datasheet PDF (10 Pages)
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2N5550TAR Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
300 MHz
Number of Pins
3 Pin
Case/Package
TO-92-3
Power Dissipation
0.625 W
Breakdown Voltage (Collector to Emitter)
140 V
hFE Min
60 @10mA, 5V
Input Power (Max)
625 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

2N5550TAR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Material
Silicon
Operating Temperature
150℃ (TJ)

2N5550TAR Documents

ON Semiconductor
10 Pages / 0.09 MByte
ON Semiconductor
10 Pages / 1.2 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
13 Pages / 0.34 MByte

2N5550 Documents

ON Semiconductor
Trans GP BJT NPN 140V 0.6A 3Pin TO-92 Box
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Trans GP BJT NPN 140V 0.6A 3Pin TO-92
KEC(Korea Electronics)
EPITAXIAL PLANAR NPN TRANSISTOR
CJ
TO-92 NPN 140V 600mA
Central Semiconductor
Trans GP BJT NPN 140V 0.6A 3Pin TO-92 Box
Philips
NPN high-voltage transistors
NXP
Trans Npn 140V 0.6A To92 Trans Npn 140V 0.6A To92
Motorola
Amplifier Transistors
Diotec Semiconductor
General Purpose Si-Epitaxial Planar Transistors
Samsung
NPN EPITAXIAL SILICON TRANSISTOR
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