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Part Datasheet Search > BJTs > ON Semiconductor > 2N5551 Datasheet PDF
2N5551
$ 0.05
2N5551 Datasheet PDF (6 Pages)
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2N5551 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
160 V
Current Rating
600 mA
Case/Package
TO-226-3
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
160 V
hFE Min
80 @10mA, 5V
Input Power (Max)
625 mW
DC Current Gain (hFE)
80
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

2N5551 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N5551 Documents

ON Semiconductor
6 Pages / 0.08 MByte
ON Semiconductor
31 Pages / 0.08 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
13 Pages / 0.34 MByte
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