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2N5551G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-92-3

Description:

TO-92 NPN 160V 0.6A

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

2N5551G Datasheet (6 Pages)

Package Outline Dimension on6 Page

Part Numbering System on1 Page 5 Page 6 Page

2N5551G Application Note (13 Pages)

2N5551G Datasheet PDF (6 Pages)

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2N5551G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

300 MHz

Number of Pins

3 Pin

Voltage Rating (DC)

160 V

Current Rating

600 mA

Case/Package

TO-92-3

Number of Positions

3 Position

Polarity

NPN

Power Dissipation

625 mW

Breakdown Voltage (Collector to Emitter)

160 V

Thermal Resistance

83.3℃/W (RθJC)

Continuous Collector Current

0.6A

hFE Min

80 @10mA, 5V

Input Power (Max)

625 mW

DC Current Gain (hFE)

100

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

625 mW

View Datasheet >

2N5551G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Material

Silicon

Size-Length

5.2 mm

Size-Width

4.19 mm

Size-Height

5.33 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

2N5551G Environmental

2N5551G Export Classifications

2N5551G Function Overview

2N5551G Documents

2N5551G Datasheet

ON Semiconductor

6 Pages / 0.08 MByte

2N5551G Other Datasheet PDF

ON Semiconductor

11 Pages / 0.39 MByte

2N5551G Drawing Diagrams

ON Semiconductor

3 Pages / 0.05 MByte

2N5551G Application Note

ON Semiconductor

13 Pages / 0.34 MByte

2N5551G Notice File

ON Semiconductor

1 Pages / 0.07 MByte

2N5551G Other References

ON Semiconductor

1 Pages / 0.16 MByte

2N5551 Documents

2N5551 Datasheet PDF

ON Semiconductor

Trans GP BJT NPN 160V 0.6A 3Pin TO-92 Bulk

2N5551 Datasheet PDF

TO-92 NPN 160V 600mA

2N5551 Datasheet PDF

Fairchild

Trans GP BJT NPN 160V 0.6A 3Pin TO-92

2N5551 Datasheet PDF

Diotec Semiconductor

Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92

2N5551 Datasheet PDF

Multicomp

MULTICOMP 2N5551 Bipolar (BJT) Single Transistor, NPN, 160V, 300MHz, 625mW, 600mA, 80 hFE

2N5551 Datasheet PDF

先科ST

NPN Vceo=160V Ic=600mA hfe=30 fT=300MHz P=625mW

2N5551 Datasheet PDF

ST Microelectronics

NPN,Vceo=160V,Ic=600mA,hfe=30~250

2N5551 Datasheet PDF

Taitron

160V NPN General Purpose Transistor in TO-92, RoHS

2N5551 Datasheet PDF

Central Semiconductor

Trans Npn 160V 0.6A To-92

2N5551 Datasheet PDF

UTC

NPN SILICON TRANSISTOR

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