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Part Datasheet Search > BJTs > ON Semiconductor > 2N5551ZL1 Datasheet PDF
2N5551ZL1
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2N5551ZL1 Datasheet PDF (6 Pages)
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2N5551ZL1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
160 V
Current Rating
600 mA
Case/Package
TO-226-3
Polarity
NPN
Breakdown Voltage (Collector to Emitter)
160 V
Continuous Collector Current
0.6A
hFE Min
80 @10mA, 5V
Input Power (Max)
625 mW

2N5551ZL1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Box (TB)
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N5551ZL1 Documents

ON Semiconductor
6 Pages / 0.08 MByte
ON Semiconductor
31 Pages / 0.08 MByte

2N5551 Documents

ON Semiconductor
Trans GP BJT NPN 160V 0.6A 3Pin TO-92 Bulk
CJ
TO-92 NPN 160V 600mA
Fairchild
Trans GP BJT NPN 160V 0.6A 3Pin TO-92
Diotec Semiconductor
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
Multicomp
MULTICOMP 2N5551 Bipolar (BJT) Single Transistor, NPN, 160V, 300MHz, 625mW, 600mA, 80 hFE
先科ST
NPN Vceo=160V Ic=600mA hfe=30 fT=300MHz P=625mW
ST Microelectronics
NPN,Vceo=160V,Ic=600mA,hfe=30~250
Taitron
160V NPN General Purpose Transistor in TO-92, RoHS
Central Semiconductor
Trans Npn 160V 0.6A To-92
UTC
NPN SILICON TRANSISTOR
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