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2N5884G
$ 8.618
2N5884G Datasheet PDF (7 Pages)
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2N5884G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
4 MHz
Number of Pins
2 Pin
Voltage Rating (DC)
-80.0 V
Current Rating
-25.0 A
Case/Package
TO-204-2
Number of Positions
2 Position
Polarity
PNP, P-Channel
Power Dissipation
200 W
Gain Bandwidth Product
4 MHz
Breakdown Voltage (Collector to Emitter)
80 V
Thermal Resistance
0.875℃/W (RθJC)
Continuous Collector Current
25A
hFE Min
20
hFE Max
100
Input Power (Max)
200 W
DC Current Gain (hFE)
4
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200000 mW

2N5884G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Material
Silicon
Size-Length
39.37 mm
Size-Width
26.67 mm
Size-Height
8.51 mm
Operating Temperature
-65℃ ~ 200℃

2N5884G Documents

ON Semiconductor
7 Pages / 0.13 MByte
ON Semiconductor
3 Pages / 0.01 MByte
ON Semiconductor
1 Pages / 0.03 MByte
ON Semiconductor
1 Pages / 0.13 MByte

2N5884 Documents

ON Semiconductor
TO-204-2 PNP 80V 25A
Microsemi
PNP POWER TRANSISTOR SILICON AMP
Multicomp
MULTICOMP 2N5884 Bipolar (BJT) Single Transistor, PNP, 80V, 4MHz, 200W, 25A, 100 hFE
Central Semiconductor
Trans Pnp 80V 25A To-3
ST Microelectronics
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
Microchip
PNP POWER TRANSISTOR SILICON AMP
NTE Electronics
NTE ELECTRONICS 2N5884 TRANSISTOR PNP SILICON 80V, IC-25A TO-3 CASE HIGH POWER AMPLIFIER APPLICATIONS COMP TO 2N5886
Mospec
POWER TRANSISTORS(25A,200W)A
Motorola
25A, 80V, PNP, Si, POWER TRANSISTOR, TO-204AA
TI
20A, 80V, PNP, Si, POWER TRANSISTOR, TO-3
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