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2N5886G
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2N5886G Datasheet PDF (6 Pages)
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2N5886G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
4 MHz
Number of Pins
2 Pin
Voltage Rating (DC)
80.0 V
Current Rating
25.0 A
Case/Package
TO-204-2
Power Rating
200 W
Number of Positions
2 Position
Polarity
NPN
Power Dissipation
200 W
Breakdown Voltage (Collector to Emitter)
80 V
Thermal Resistance
0.875℃/W (RθJC)
Continuous Collector Current
25A
hFE Min
20 @10A, 4V
hFE Max
100
Input Power (Max)
200 W
DC Current Gain (hFE)
4
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200000 mW

2N5886G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Material
Silicon
Size-Length
39.37 mm
Size-Width
26.67 mm
Size-Height
8.51 mm
Operating Temperature
-65℃ ~ 200℃

2N5886G Documents

ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
8 Pages / 0.12 MByte
ON Semiconductor
1 Pages / 0.03 MByte
ON Semiconductor
1 Pages / 0.16 MByte

2N5886 Documents

ON Semiconductor
TO-204-2 NPN 80V 25A
ST Microelectronics
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
Microsemi
Trans GP BJT NPN 80V 25A 3-Pin(2+Tab) TO-3
Multicomp
MULTICOMP 2N5886 Bipolar (BJT) Single Transistor, NPN, 80V, 4MHz, 200W, 25A, 100 hFE
Semelab
Trans GP BJT NPN 80V 25A 3Pin(2+Tab) TO-3
NTE Electronics
t-Npn Si- Po Amp ; Rohs Compliant: Yes
Microchip
PNP POWER TRANSISTOR SILICON AMP
SPC
Bipolar Transistor, Npn, 80V, To-3
Motorola
25A, 80V, NPN, Si, POWER TRANSISTOR, TO-204AA
Solitron Devices
Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
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