2N6341G Datasheet PDF - ON Semiconductor

●The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications.

●Features

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● High Collector-Emitter Sustaining Voltage

●VCEO(sus) = 100 Vdc (Min) 2N6338

●VCEO(sus) = 150 Vdc (Min) - 2N6341

● High DC Current Gain

●hFE = 30 - 120 @ IC = 10 Adc

●hFE = 12 (Min) @ IC = 25 Adc

● Low Collector-Emitter Saturation Voltage

●VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc

● Fast Switching Times @ IC = 10 Adc

●tr = 0.3 µs (Max)

●ts = 1.0 µs (Max)

●tf = 0.25 µs (Max)

● These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.