2N6788 Datasheet PDF - Infineon

●The 2N6788 is a HEXFET® N-channel Power MOSFET suitable for inverters, choppers and high energy pulse circuit. The efficient geometry and unique processing of this latest state of the art design achieves very low ON-state resistance combined with high transconductance. The HEXFET® transistor also features all of the well established advantages of MOSFET such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

● Repetitive avalanche rating

● Dynamic dV/dt rating

● Hermetically sealed

● Simple drive requirements