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Part Datasheet Search > MOSFETs > Fairchild > 2N7000BU Datasheet PDF
2N7000BU
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2N7000BU Datasheet PDF (7 Pages)
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2N7000BU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
200 mA
Case/Package
TO-92-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
5 Ω
Polarity
N-Channel
Power Dissipation
400 mW
Threshold Voltage
3.9 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
200 mA
Rise Time
10 ns
Input Capacitance (Ciss)
50pF @25V(Vds)
Input Power (Max)
400 mW
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
400mW (Ta)

2N7000BU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N7000BU Documents

Fairchild
7 Pages / 0.1 MByte
Fairchild
6 Pages / 0.15 MByte
Fairchild
3 Pages / 0.5 MByte

2N7000 Documents

Fairchild
Trans MOSFET N-CH 60V 0.2A 3Pin TO-92 Bulk
ON Semiconductor
Small Signal MOSFET 60V 200mA 5Ω Single N-Channel TO-92, TO-92 (TO-226) 5.33mm Body Height, 10000-BLKBG
CJ
TO-92 N 60V 0.2A 5Ω
Diotec Semiconductor
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT, PLASTIC, 10D3, 3Pin
ST Microelectronics
Trans MOSFET N-CH 60V 0.35A 3Pin TO-92 Bag
NTE Electronics
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
Luguang Electronic
Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.35W; TO92
Supertex
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3Pin
National Semiconductor
N-Channel Enhancement Mode Field Effect Transistor
Motorola
200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-226AA, 3Pin
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