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Part Datasheet Search > MOSFETs > Microchip > 2N7000-G Datasheet PDF
2N7000-G
$ 0.288
2N7000-G Datasheet PDF (5 Pages)
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2N7000-G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-92-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
5 Ω
Power Dissipation
1 W
Threshold Voltage
3 V
Input Capacitance
60 pF
Drain to Source Voltage (Vds)
60 V
Input Capacitance (Ciss)
60pF @25V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1W (Tc)

2N7000-G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bag
Material
Silicon
Size-Length
5.21 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N7000-G Documents

Microchip
5 Pages / 0.61 MByte
Microchip
6 Pages / 0.13 MByte
Microchip
3 Pages / 0.5 MByte

2N7000 Documents

Fairchild
Trans MOSFET N-CH 60V 0.2A 3Pin TO-92 Bulk
ON Semiconductor
Small Signal MOSFET 60V 200mA 5Ω Single N-Channel TO-92, TO-92 (TO-226) 5.33mm Body Height, 10000-BLKBG
CJ
TO-92 N 60V 0.2A 5Ω
Diotec Semiconductor
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT, PLASTIC, 10D3, 3Pin
ST Microelectronics
Trans MOSFET N-CH 60V 0.35A 3Pin TO-92 Bag
NTE Electronics
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
Luguang Electronic
Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.35W; TO92
Supertex
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3Pin
National Semiconductor
N-Channel Enhancement Mode Field Effect Transistor
Motorola
200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-226AA, 3Pin
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